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| sot - 23 plastic - encapsulate diodes mmbd150 1 a low leakage d iode f eatures ? low l eakage ? high c onductanc e marking : a1 1 maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v r dc blocking voltage 200 v i o continuous f orward c urrent 200 ma i fm p eak f orward c urrent 700 ma non - repetitive peak forward surge c urrent @ t=1s 1 a i f s m @t=1ms 2 a p d power d issipation 350 mw r j a the rmal r esistance from junction to a mbient 357 /w t j junction t emperature 150 t stg s torage t emperature - 5 5 ~+ 150 electrical c haracteristics (t a =25 unless otherwise specified) parameter symb ol test conditions m in typ m ax u nit reverse voltage v (br) i r = 5 a 200 v reverse c urrent i r v r = 180 v 10 n a i f = 1 m a 0.75 i f = 10 m a 0.85 i f = 50 m a 0. 95 i f = 100 m a 1.1 i f = 200ma 1.3 forward voltage v f i f = 300ma 1.5 v total capacitance c tot v r = 0 v,f=1mhz 4 pf so t - 23 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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